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Creators/Authors contains: "Pandey, Ramesh"

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  1. ; ; ; ; ; (, ACS Applied Materials & Interfaces)
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  2. ; ; ; ; ; ; ; ; ; ; et al (, Solar Energy Materials and Solar Cells)
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  3. ; ; ; ; ; ; ; ; ; (, ACS Applied Materials & Interfaces)
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  4. ; ; ; ; ; ; (, IEEE Journal of Photovoltaics)
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  5. ; ; ; ; ; ; (, 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC))
    An intricate look is taken at the methods used to account for variance in minority-carrier lifetime in the silicon bottom cell of II-VI/Si tandem solar cells. A discussion on the modeling is provided. Lateral wafer variance is determined to be much less than wafer-to-wafer variance. Size testing indicates a minimum size of 4 × 4 cm is necessary for accurate results. The cleaning procedure and photoluminescence testing is described. Despite a small sample size, Si samples with CdTe deposition and CdCl2 treatment maintain over 1 ms lifetimes, enabling the Si bottom cell in II-VI/Si tandem cells to reach state-of-the-art performance. 
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  6. ; ; ; ; ; ; ; ; (, 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC))
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  7. ; ; ; ; ; ; ; ; (, Solar RRL)
    Grading of bandgap by alloying CdTe with selenium to form a CdSexTe1–x/CdTe‐graded bilayer device has led to a device efficiency over 19%. A CdSexTe1–xabsorber would increase the short‐circuit current due to its lower bandgap but at the expense of open‐circuit voltage. It has been demonstrated that adding a CdTe layer at the back of such a CdSexTe1–xfilm reduces the voltage deficit caused by the lower bandgap of absorber from selenium alloying while maintaining the higher short‐circuit current. This leads to a photovoltaic device that draws advantage from both materials with an efficiency greater than either of them. Herein, a detailed account using device data, ultraviolet photoelectron spectroscopy, electron microscopy, and first‐principles density functional theory modeling is provided, which shows that CdTe acts as an electron reflector for CdSexTe1–x. 
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